المشارك في البحث
قسم البحث
سنة البحث
2019
مجلة البحث
2019, 36th National Radio Science Conference (NRSC 2019)
الناشر
NULL
عدد البحث
NULL
تصنيف البحث
4
صفحات البحث
378-385
موقع البحث
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8734592&isnumber=8734528
ملخص البحث
This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 µm x 3 µm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 µVrms with a 4 MHz bandwidth. Power dissipation of 11.2 µW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.