AI-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected for this study. From the electrical resistivity measurements it is concluded that the resistivity increment of Al-Mg alloys (in a solid solution state) is proportional to the atomic fractional constituents (Mg and Al) as D pall = 64.66 c(1 -c) m W cm. In addition, both the temperature coefficient of resistivity, a all and the relaxation time of the free electrons t all in the alloys diminish with increasing the solute Mg concentration. The increase of the scattering power, h , with increasing C is interpreted to be due to the contribution of electron-impurity scattering. The percentage increase due to electron-impurity scattering per one atomic percent Mg has been determined as 12.99%. The Debye temperature q decreases as the Mg concentration increases. The microhardness results showed that the solid solution hardening obeys the relation D HVs = 135.5C0.778 Mpa which is comparable to the theory of solid solution hardening for all alloys; D HVs = C0.5-0.67 MPa.

PACS. 61.66.Dk Alloys