This paper reports photoelectrical properties of (As₃₀Sb₁₅Se₅₅)_100−xTe_x amorphous chalcogenide films (0 ⩽ x ⩽ 12.5 at.%) through measurements of ‘steady state’ and ‘transient’ photocurrents. The composition dependence of the steady state photocurrent at room temperature shows that the photoconductivity increases while the photosensitivity decreases with increasing Te content. A study of photoconductivity of (As₃₀Sb₁₅Se₅₅)_100−xTe_x at different levels of light intensity reveals that, the photoconductivity increases exponentially with increase in light intensity. The Photocurrent (I_ph) when plotted against light intensity (G) follows a power law (I_ph = G^γ) the exponent γ for (As₃₀Sb₁₅Se₅₅)_100−xTe_x films has been found nearly 0.5 suggesting bimolecular recombination. The transient photoconductivity shows that the lifetime of the carrier decreases with increasing the light intensity. This decrease suggests that …