We report here the structural, FTIR, optical, mechanical, and magnetic properties of Zn1−xFexO with various Fe nanopow-der additions (0.00 ≤ x ≤ 0.30). The wurtzite structure and compressive stress are clearly conformed in all samples. Further, the lattice constants, crystallite size, porosity, strains, grain size, Debye temperature, and elastic modulus are increased as x increases to 0.05, followed by a decrease at x = 0.30, but they are higher than those of ZnO. Interestingly, two electronic transitions were observed for all samples corresponding to two values of energy gaps, Eg1 and Eg2. They were decreased from 3.25 and 3.72 eV to 3.00 and 3.60 eV, respectively. In contrast, an enhancement of the lattice constant εL, the density of charge carriers (N/m*), and the optical and electrical conductivities as x increases was obtained. For example, εL and charge carriers density (N/m*) for x = 0.30 doped sample are, respectively, 10 and 15 times more than those of ZnO. The refractive index (n) increases as x is increased, and a good correlation between n and Eg was obtained. Other parameters, such as the dissipation factor, surface and bulk loss functions, were also controlled by the variation of x. The non-linear optical param-eters were also increased by increasing x, indicating not only the interesting optical properties of these materials but also the possibility of their optoelectronic applications. The Vickers hardness Hv is increased by increasing x to 0.30 and applying load to 9.8 N. In contrast, the surface energy γ, elastic indentation de, and resistance pressure decrease as x increases to 0.10, followed by an increase at x = 0.30. A noticeable ferromagnetic behavior with evaluated magnetization parameters is clearly obtained for the x = 0.10 sample. The saturation magnetization Ms is about 250 times greater than that of ZnO, which sup-ports the room temperature ferromagnetic (RTFM) for the Fe-doped sample. These findings indicate that the addition of Fe as nanopowder to ZnO is promising for altering plastic flow region, optoelectronic, high-power operating and spintronic devices, which highlights the present investigation.