Chalcogenide Se90Sb10 thin films are deposited by thermal evaporation from the bulk alloy. X-ray diffraction
examination for the annealed films shows the amorphous-crystalline transformation. This is beneficial for optical
disk data storage technology. The crystallinity is improved by increasing the annealing temperature. The films
annealed at relatively low temperatures exhibit highly transparence reaching to about 90% at incident light of
wavelength of 900 nm. The as-prepared and annealed Se90Sb10 films reveal an indirect allowed optical transition. The annealed film at 473 K has an optical band gap of 1.676 eV which is suitable value for solar cell as
photovoltaic application. Both the indirect optical energy band gap (Eg) and the oscillator energy (Eo) decrease
whereas the oscillator strength (Ed) increases with increasing the annealing temperature. The annealing increases the conductivity and decreases the activation energy for conduction resulting in enhancement of film
properties for adapting to solar cells