Small size GaN nanorods (GaN NRs) show new features of the photoluminescence (PL) associated with the
enhanced surface effects and the strong electron-phonon coupling. A dominant emission is observed at
3.43 eV; a lower energy with respect to the commonly reported D0XA peak for thicker NRs. The phonon
replicas of the silent B1l acoustic phonon mode are well represented in the PL spectra at temperatures up to
150 K inferring the enhanced Fröhlich electron-phonon coupling. The B1l phonon mode was previously
detected for the grown GaN NRs by resonant Raman scattering under resonance excitation. The enhanced
electron-phonon coupling through Fröhlich interaction is proven by the calculated Huang-Rhys factor. The
low-energy dominant peak intensity is around six times the D0XA peak intensity indicating that the majority
of excitons occupy the surface shell of GaN NRs. This study provides new insights on small-size GaN NRs
that greatly influence their physical properties for applications in optoelectronics, UV and blue lasers, and
high-temperature/high-power electronic devices