InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

Faculty of Engineering

Assiut University

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

Research Authors
M. Atef, P. Hazdra, V.Komarnitskyy, J. Oswald, K. Kuldova, A. Hospodkova, E. Hulicius and J. Pangrac
Research Member
Mohamed Atef Elsayed Abdelaal
Research Department
Electrical Engineering Department
Research Year
2007
Research Journal
Journal of Acta Metallurgica Slovaca Spec.Issue
Research Vol
Vol. 13, No. 5
Research Rank
1
Research_Pages
pp.99-104