Study of Tunneling Current Through Ultra-thin Gate Oxide MOSFET and its Effect on CMOS Circuits

Faculty of Engineering

Assiut University

Study of Tunneling Current Through Ultra-thin Gate Oxide MOSFET and its Effect on CMOS Circuits

Research Authors
M.A.Sayed and M.Atef
Research Member
Mohamed Atef Elsayed Abdelaal
Research Department
Electrical Engineering Department
Research Year
2005
Research Journal
JOURNAL OF ENGINEERING SCIENCES

Research Rank
2