InAs/GaAs Quantum Dot Structures Covered by InGaAs Strain Reducing Layer Characterised by Photomodulated Reflectance

Faculty of Engineering

Assiut University

InAs/GaAs Quantum Dot Structures Covered by InGaAs Strain Reducing Layer Characterised by Photomodulated Reflectance

Research Authors
P. Hazdra, J. Oswald, M.Atef, J. Voves,, K. Kuldova, A. Hospodkova, E. Hulicius and J. Pangrac
Research Member
Mohamed Atef Elsayed Abdelaal
Research Department
Electrical Engineering Department
Research Year
2007
Research Journal
In E-MRS Spring Meeting 2007 - Book of Abstracts,France, Strasbourg
Research Rank
3
Research_Pages
pp.715