This paper presents the design of Ultra-Wideband Low Noise Amplifier (UWB LNA) beside the illustration of wideband amplifiers design using 3D inductors. The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.