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Hole doping effect on the electronic structure of layered oxypnictide LaOMnAs

Research Authors
A. Higashiyaa,b,∗, K. Nakagawa b,c, A. Yamasaki b,c, K. Nagai b,d, S. Fujioka b,d, Y. Kanai b,d, K. Yamagami b,d, H. Fujiwara b,d, A. Sekiyama b,d, Amina Abozeedb,e, T. Kadono b,e, S. Imada b,e, K. Kuga b, M. Yabashi b, K. Tamasakub, T. Ishikawa b, S. Toy
Research Abstract

Layered oxypnictide LaOMnAs shows an antiferromagnetic insulator-to-ferromagnetic metal transition at room temperature with increasing the defect of LaO layer which induces hole doping into the MnAs layers. In order to reveal the details of the transition, we have performed hard-X-ray photoelectron spectroscopy for the insulating LaOMnAs and metallic (LaO)0.7MnAs. The spectral changes in the valence band, mainly composed of Mn 3d states, Mn 2p core levels, and La 3d core-levels have been observed across the transition. Our results indicated that Mn 3d state was significantly influenced by the defect of LaO layer.

Research Date
Research Department
Research Journal
Journal of Electron Spectroscopy and Related Phenomena
Research Publisher
Journal of Electron Spectroscopy and Related Phenomena
Research Vol
220
Research Year
2017
Research Pages
58-60