Crystallization kinetics of the Bi10Se90-x Inx glasses with x = 5, 10, and 20 at% have been studied under non-isothermal conditions. From the heating rate dependence of Tg and Tp, values of the activation energy for the glass transition (Et) and the activation energy for crystallization (Ec) are evaluated and their composition dependence discussed. DSC thermograms and X-ray diffractograms are useful in clarifying the role of In content on the crystallization phases and the electrical resistivity of these glasses. The results indicate that the crystallization mechanism involves several complex processes and that bulk crystallization with three-dimensional growth dominates over the other crystallization processes.