In addition to the conversion from p-type to n-type conductivity that occurs in Ge-Se-Bi thin films when Bi is incorporated in a certain concentration. We found that, when these films were illuminated to UV light, after being annealed at glass transition temperature Tg, the photobleaching is dominant for Ge20Se80-xBix (x=0, 2.5, and 5 at.%), while for Ge20Se72.5Bi7.5 photodarkening is dominant. The photoinduced changes in the optical constants were studied. The refractive index (n) has been analysed according to the Wwmple-DiDominico single oscillator model and the values of Eo and Ed for exposed and unexposed films were determined, respectively. The photostructural effects were discussed in the light of single-double well model proposed by Tanaka and chemical bond approach